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| inchange semiconductor product specification silicon npn power transistors BUW35 description ? with to-3 package ? high breakdown voltage applications ? for high voltage ,fast switching applications pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 800 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 15 a i b base current 5 a p t total power dissipation t c ? 25 ?? 125 w t j junction temperature 200 ?? t stg storage temperature -65~200 ?? thermal characteristics symbol parameter value unit r th j-c thermal resistance from junction to case 1.4 ?? /w fig.1 simplified outline (to-3) and symbol ?? inchange semiconductor
inchange semiconductor product specification 2 silicon npn power transistors BUW35 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 400 v v cesat collector-emitter saturation voltage i c =8a; i b =2.5a 1.5 v v besat base-emitter saturation voltage i c =8a; i b =2.5a 1.8 v i ces collector cut-off current v ce =800v ;v be =0 t c =125 ?? 0.1 3.0 ma i ebo emitter cut-off current v eb =7v; i c =0 1 ma h fe-1 dc current gain i c =1a ; v ce =5v 15 50 h fe-2 dc current gain i c =5a ; v ce =5v 8 switching times t on turn-on time 0.7 | s t s storage time 3.0 | s t f fall time i c =5a ;i b1 =- i b2 =1a v cc =250v 0.8 | s ?? inchange semiconductor inchange semiconductor product specification 3 silicon npn power transistors BUW35 package outline fig.2 outline dimensions ?? inchange semiconductor |
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